OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

doi:10.1088/1009-1963/15/5/019

Abstract

Abstract This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H₂/Ar) could strongly influence the gas phase. C₂ is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C₂ and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C₂ is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.

Keywords: gas phase OES diamond film high power DC arc plasma jet CVD

Received: 21 July 2005
Revised: 27 December 2005
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	52.25.Os	(Emission, absorption, and scattering of electromagnetic radiation ?)
	52.75.-d	(Plasma devices)
	52.77.Dq	(Plasma-based ion implantation and deposition)

Fund: Project supported by the Key Research Project of Chinese Hi-Tech (Grant No 2002AA305508); the National Natural Science Foundation of China (Grant No 50472095); SRF for ROCS, SEM (Grant No 2003-14) and Beijing Novel Project (Grant No 2003A13).

Cite this article:

Zhou Zu-Yuan (周祖源), Chen Guang-Chao (陈广超), Tang Wei-Zhong (唐伟忠), Lü Fan-Xiu (吕反修) OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system 2006 Chinese Physics 15 980

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OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

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