Abstract Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH4) at a temperature of 900℃ on SiO2 substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV, and the factor $\alpha$, which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.
Received: 27 October 2005
Revised: 28 February 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China, the Knowledge Innovation Program of the Chinese Academy of Sciences, and the National Center for Nanoscience and Technology of China (Grant No 10374108).
Cite this article:
Fang Jing-Hai (方靖海), Liu Li-Wei (刘立伟), Kong Wen-Jie (孔文婕), Cai Jian-Zhen (蔡建臻), Lü Li (吕力) Fabrication and electrical properties of a carbon nanotube quantum dot 2006 Chinese Physics 15 1071
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