Abstract Fast photoelectric effects have been observed in MgB2 thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was $\sim $185 ns for the photovoltaic pulse when the film was irradiated by a 308 nm laser pulse of 25 ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB2 film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.
Received: 17 November 2005
Revised: 16 December 2005
Accepted manuscript online:
The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). Chin. Phys. B, 2022, 31(4): 048503.
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