Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

doi:10.1088/1009-1963/15/12/041

Abstract

Abstract We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.

Keywords: Hall effect spin--orbit coupling spintronics spin transport

Received: 28 February 2006
Revised: 19 July 2006
Accepted manuscript online:

PACS:	73.63.Hs	(Quantum wells)
	71.70.Ej	(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
	72.10.Bg	(General formulation of transport theory)
	72.20.My	(Galvanomagnetic and other magnetotransport effects)
	72.25.Dc	(Spin polarized transport in semiconductors)
	72.80.Ey	(III-V and II-VI semiconductors)

Cite this article:

Song Hong-Zhou(宋红州), Zhang Ping(张平), Duan Su-Qing(段素青), and Zhao Xian-Geng(赵宪庚) Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells 2006 Chinese Physics 15 3019

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Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

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