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Chinese Physics, 2006, Vol. 15(11): 2710-2712    DOI: 10.1088/1009-1963/15/11/041
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Induced growth of high quality ZnO thin filmsby crystallized amorphous ZnO

Wang Zhi-Jun(王志军)a)b), Song Li-Jun(宋立军)c), Li Shou-Chun(李守春)a), Lu You-Ming(吕有明)d), Tian Yun-Xia(田云霞)a), Liu Jia-Yi(刘嘉宜)a), and Wang Lian-Yuan(王连元)a)
a Physics College of Jilin University, Changchun 130026, China; b Department of Materials Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan; c Dean Office, Changchun University, Changchun 130022, China; d Laboratory of Excited State Processes of Chinese Academy of Sciences, Changchun Institute of Optics, vs-1mm Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Abstract  This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.
Keywords:  amorphous ZnO      Induced growth      ZnO thin films  
Received:  09 March 2006      Revised:  22 April 2006      Accepted manuscript online: 
PACS:  68.55.A- (Nucleation and growth)  
  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  68.37.Ps (Atomic force microscopy (AFM))  
  78.55.Et (II-VI semiconductors)  
  78.66.Hf (II-VI semiconductors)  
Fund: Project supported by the ``863" High Technology Research Program in China (Grant No 2001AA311120), the National Natural Science Foundation of China (Grant No 60278031), the Innovation Project of Chinese Academy of Sciences, the Jilin Province Science and Technology Development Program Project of China (Grant No 20040564) and the Young Innovation Function of the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (Grant No Q03M23Z).

Cite this article: 

Wang Zhi-Jun(王志军), Song Li-Jun(宋立军), Li Shou-Chun(李守春), Lu You-Ming(吕有明), Tian Yun-Xia(田云霞), Liu Jia-Yi(刘嘉宜), and Wang Lian-Yuan(王连元) Induced growth of high quality ZnO thin filmsby crystallized amorphous ZnO 2006 Chinese Physics 15 2710

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