Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states

doi:10.1088/1009-1963/14/9/041

Abstract

Abstract Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers (ML) have been performed within a temperature range 75--270K.Well-defined quantum well states (QWSs) are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature,whereas the peak width broadens linearly due to enhanced electron--phonon coupling strength ($\lambda$). An oscillatory $\lambda$ with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects.

Keywords: Pb thin films photoemission quantum well states electron--phonon interactions

Received: 08 May 2005
Revised: 23 May 2005
Accepted manuscript online:

PACS:	79.60.Dp	(Adsorbed layers and thin films)
	68.55.-a	(Thin film structure and morphology)
	63.20.K-	(Phonon interactions)
	73.20.-r	(Electron states at surfaces and interfaces)

Fund: Project supported by the National Natural Science Foundation (Grant Nos 60021403, 60325415, 60128404) and the Special Funds for Major State Basic Research Program (Grant Nos G001CB3095, 2002CB613502, 2004CB720608) of Ministry of Science and Technology of

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Zhang Yan-Feng (张艳锋), Jia Jin-Feng (贾金锋), Han Tie-Zhu (韩铁柱), Tang Zhe (唐喆), Shen Quan-Tong (沈全通), Guo Yang (郭阳), Xue Qi-Kun (薛其坤) Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states 2005 Chinese Physics 14 1910

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Oscillatory electron phonon coupling in Pb/Si(111) deduced by temperature-dependent quantum well states

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