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Chinese Physics, 2005, Vol. 14(7): 1378-1381    DOI: 10.1088/1009-1963/14/7/019
ATOMIC AND MOLECULAR PHYSICS Prev   Next  

Absolute oscillator strength densities below 100eV of N2

Sun Jian-Min (孙建敏)a, Zhong Zhi-Ping (钟志萍)b, Zhu Lin-Fan (朱林繁)a, Liu Xiao-Jing (刘小井)a, Yuan Zhen-Sheng (苑震生)a, Xu Ke-Zun (徐克尊)a
a Hefei National Laboratory for Physical Sciences at Microscale, Department of Modern Physics,University of Science and Technology of China, Hefei 230026, China; b Department of Physics, Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
Abstract  The absolute optical oscillator strength density (OOSD) and generalized oscillator strength densities (GOSDs) below 100eV of N$_2$ are determined with an incident electron energy of 2500eV and an energy resolution of 100 meV. The absolute generalized oscillator strengths (GOSs) for two transitions to the superexcited states at 23 and 31.4eV are determined and their momentum transfer dependence behaviours are discussed.
Keywords:  oscillator strength      superexcited state      energy-loss spectrum  
Received:  25 November 2004      Revised:  10 January 2005      Accepted manuscript online: 
PACS:  33.70.Ca (Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors)  
  34.50.Bw (Energy loss and stopping power)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 10474089, 10134010 and 10004010).

Cite this article: 

Sun Jian-Min (孙建敏), Zhong Zhi-Ping (钟志萍), Zhu Lin-Fan (朱林繁), Liu Xiao-Jing (刘小井), Yuan Zhen-Sheng (苑震生), Xu Ke-Zun (徐克尊) Absolute oscillator strength densities below 100eV of N2 2005 Chinese Physics 14 1378

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