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Chinese Physics, 2005, Vol. 14(5): 949-952    DOI: 10.1088/1009-1963/14/5/015
NUCLEAR PHYSICS Prev   Next  

I-V characteristics of foilless diodes

Liu Guo-Zhi (刘国治), Huang Wen-Hua (黄文华), Yang Zhan-Feng (杨占峰)
Northwest Institute of Nuclear Technology, Xi’an, China, P. O. 69-13, 710024
Abstract  Some physical characteristics of foiless diodes are obtained and analyzed by numerical simulations. Relations between diode current and configuration parameters, diode voltage and external magnetic field are investigated. Employing these relations and assuming that the external magnetic field is intense enough, the diode current can be approximately written as $I_{\rm b}=(7.5/x)(x+(0.81-x)/(1+0.7L_{\rm d}^2/\delta r))(\gamma_0^{2/3}-1)^{3/2}$, in which $L_{\rm d}$  is the Anode-Cathode (AK) gap, $R_{\rm c}$ the outer radius of cathode, and $R_{\rm p}$ the radius of drifting tube; $x=\ln(R_{\rm p}/R_{\rm c}$),$\delta r =R_{\rm p}-R_{\rm c}$ . This expression is comparatively accurate for with different configuration parameters and voltages, results obtained from this expression are consistent with that of numerical simulations within an error of 10%.
Keywords:  foilless diode      I-V relation      intense electron beam  
Received:  06 August 2004      Revised:  30 December 2004      Accepted manuscript online: 
PACS:  2925B  
  4180D  
Fund: Project supported by the National High Technology Development Program of China (Grant No 2004AA834060)

Cite this article: 

Liu Guo-Zhi (刘国治), Huang Wen-Hua (黄文华), Yang Zhan-Feng (杨占峰) I-V characteristics of foilless diodes 2005 Chinese Physics 14 949

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