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Chinese Physics, 2005, Vol. 14(5): 1025-1031    DOI: 10.1088/1009-1963/14/5/030
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effects of temperature and electron effective mass on bias-dependent tunnelling magnetoresistance

Li Fei-Fei (李飞飞), Li Zheng-Zhong (李正中), Xiao Ming-Wen (肖明文)
Department of Physics,Nanjing University, Nanjing 210093, China
Abstract  In this paper, we study effects of temperature and electron effective mass within the barrier on the bias dependence and sign-change behavior of the tunneling magnetoresistance (TMR) in ferromagnetic junctions. A significant decrease of the tunneling magnetoresistance with elevating temperature is obtained, in accordance with experiments. In addition to the height of barrier potential $(\phi)$   discussed in our previous papers, the electron effective mass $(m_{\rm B})$   within the barrier region is found to be another important factor that physically controls the sign-change behavior of the TMR. The critical voltage ($V_{\rm c}$) at which TMR changes sign will increase with $\phi$ and decrease with $m_{\rm B}$, respectively. Furthermore, both the zero-bias TMR and $V_{\rm c}$ will decrease if temperature rises. These results are hoped to be of practical use for experimental investigations.
Keywords:  magnetotransport effects      quantumtunneling  
Received:  01 November 2004      Revised:  14 December 2004      Accepted manuscript online: 
PACS:  7215G  
  7335C  
Fund: 国家重点基础研究发展规划项目(973)资助 (001CB610602)

Cite this article: 

Li Fei-Fei (李飞飞), Li Zheng-Zhong (李正中), Xiao Ming-Wen (肖明文) Effects of temperature and electron effective mass on bias-dependent tunnelling magnetoresistance 2005 Chinese Physics 14 1025

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