Abstract Er-doped SiOx films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atmosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction indicated that annealing induces a microstructure change from amorphous to crystalline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped SiOx films has been studied and discussed.
Received: 08 September 2004
Revised: 11 November 2004
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50240420656)
Cite this article:
Duan Shu-Qing (段淑卿), Tan Na (谭娜), Zhang Qing-Yu (张庆瑜) Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition 2005 Chinese Physics 14 615
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