Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H—SiC
Gao Xin (高欣)a, Sun Guo-Sheng (孙国胜)a, Li Jin-Min (李晋闽)a, Zhang Yong-Xin (张永兴)b, Wang Lei (王雷)a, Zhao Wan-Shun (赵万顺)a, Zeng Yi-Ping (曾一平)a
a Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
Abstract High-dose ion implantation of phosphorus into 4H—SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0×1012 P+cm-2$\cdot$s-1 and keeping the implantation dose constant at 2.0×1015 P+cm-2. The implantations are performed at room temperature and subsequently annealed at 1500℃. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500℃, a reasonably low sheet resistance of 106Ω/□ is obtained at ion flux of 1.0×1012 P+cm-2$\cdot$s-1 with a donor concentration of 4.4×1019cm-3.
Received: 25 May 2004
Revised: 04 November 2004
Accepted manuscript online:
Gao Xin (高欣), Sun Guo-Sheng (孙国胜), Li Jin-Min (李晋闽), Zhang Yong-Xin (张永兴), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Zeng Yi-Ping (曾一平) Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H—SiC 2005 Chinese Physics 14 599
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