Study on stability of hydrogenated amorphous silicon films
Zhu Xiu-Hong (朱秀红)a, Chen Guang-Hua (陈光华)a, Zhang Wen-Li (张文理)a, Ding Yi (丁毅)b, Ma Zhan-Jie (马占洁)a, Hu Yue-Hui (胡跃辉)a, He Bin (何斌)a, Rong Yan-Dong (荣延栋)a
a Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China; b Department of Physics, Lanzhou University, Lanzhou 730000, China
Abstract Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (~$10^{5}$) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (CH) as well as H--Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature,hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results.
Received: 24 January 2005
Revised: 20 June 2005
Accepted manuscript online:
Fund: Project supported by the National Basic Research Program of China (Grant No G2000028201-1).
Cite this article:
Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Zhang Wen-Li (张文理), Ding Yi (丁毅), Ma Zhan-Jie (马占洁), Hu Yue-Hui (胡跃辉), He Bin (何斌), Rong Yan-Dong (荣延栋) Study on stability of hydrogenated amorphous silicon films 2005 Chinese Physics 14 2348
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