Abstract The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for III--V and II--VI compound semiconductor quantum well structures have been numerically computed. The results for GaAs/AlGaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton--phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.
Received: 16 May 2005
Revised: 27 June 2005
Accepted manuscript online:
Fund: Project supported in part by the National Natural Science Foundation of China (Grant No 10164003) and the Natural Science Foundation of Inner Mongol of China (Grant No 200408020101).
Cite this article:
Wu Yun-Feng (吴云峰), Liang Xi-Xia (梁希侠), K. K. Baja On the binding energies of excitons in polar quantum well structures in a weak electric field 2005 Chinese Physics 14 2314
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