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Chinese Physics, 2005, Vol. 14(10): 2145-2148    DOI: 10.1088/1009-1963/14/10/038
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

Liu Fa-Min (刘发民)a, Zhang Li-De (张立德)b, Li Guo-Hua (李国华)c
a Department of Physics, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China; b Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China; c National Laboratory for Superlattices and Microstructure,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  The composite films of the nanocrystalline GaAs1-xSbx--SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx--SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.
Keywords:  nanocrystalline GaAs1-xSbx      photoluminescence      transmission absorption      quantum confinement effect  
Received:  01 March 2005      Revised:  24 May 2005      Accepted manuscript online: 
PACS:  78.55.Cr (III-V semiconductors)  
  78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)  
  81.15.Cd (Deposition by sputtering)  
  78.66.Fd (III-V semiconductors)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
Fund: Project supported by the Aeronautics Science Foundation of China (Grant No 03G51069).

Cite this article: 

Liu Fa-Min (刘发民), Zhang Li-De (张立德), Li Guo-Hua (李国华) Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films 2005 Chinese Physics 14 2145

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