Please wait a minute...
Chinese Physics, 2005, Vol. 14(1): 208-211    DOI: 10.1088/1009-1963/14/1/038
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Electron tunnelling phase time and dwell time through an associated delta potential barrier

Bai Er-Juan (白尔隽)a, Shu Qi-Qing (舒启清)b
a Institute of Applied Nuclear Technology, Shenzhen University, Shenzhen 518060, China; b School of Science, Shenzhen University, Shenzhen 518060, China
Abstract  The electron tunnelling phase time $\tau^{\rm p}$ and dwell time $\tau_{\rm D}$ through an associated delta potential barrier $U(x)=\xi\delta(x)$ are calculated and both are in the order of 10$^{-17} -10^{-16 }$s. The results show that the dependence of the phase time on the delta barrier parameter $\xi$ can be described by the characteristic length $l_{\rm c} =\hbar^{2}/m_{\rm e}\xi $ and the characteristic energy $E_{\rm c}=m_{\rm e}\xi^{2}/\hbar^{2}$ of the delta barrier, where $m_{\rm e}$ is the electron mass, $l_{\rm c}$ and $E_{\rm c}$ are assumed to be the effective width and height of the delta barrier with $l_{\rm c}E_{\rm c}=\xi$, respectively. It is found that $\tau_{\rm D}$ reaches its maximum and $\tau _{\rm D}=\tau^{\rm p}$ as the energy of the tunnelling electron is equal to $E_{\rm c}$/2, i.e. as $l_{\rm c} =\lambda _{\rm DB}$, $\lambda_{\rm DB} $ is de Broglie wave length of the electron.
Keywords:  associated delta potential barrier      tunnelling phase times      tunnelling dwell times charac-teristic length      characteristic energy  
Received:  15 October 2003      Revised:  20 July 2004      Accepted manuscript online: 
PACS:  7340G  
  7210B  
  0365B  
Fund: Project supported by the Shenzhen Research and Development Programme on Science and Technology

Cite this article: 

Bai Er-Juan (白尔隽), Shu Qi-Qing (舒启清) Electron tunnelling phase time and dwell time through an associated delta potential barrier 2005 Chinese Physics 14 208

[1] Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes
Li Chun-Wei(李春伟), Zhu Yan-Xu(朱彦旭), Shen Guang-Di(沈光地), Zhang Yong-Hui(张勇辉), Qin Yuan(秦园), Gao Wei(高伟), Jiang Wen-Jing(蒋文静), and Zhou De-Shu(邹德恕). Chin. Phys. B, 2010, 19(9): 097305.
[2] Influence of external voltage on electronic transport properties of molecular junctions: the nonlinear transport behaviour 
Li Zong-Liang (李宗良), Wang Chuan-Kui (王传奎), Luo Yi (罗毅), Xue Qi-Kun (薛其坤). Chin. Phys. B, 2005, 14(5): 1036-1040.
[3] Resonant tunnelling in parabolic quantum well structures under a uniform transverse magnetic field
Gong Jian (宫箭), Liang Xi-Xia (梁希侠), Ban Shi-Liang (班士良). Chin. Phys. B, 2005, 14(1): 201-207.
[4] SINGLE-ELECTRON TRANSISTORS FOR FUTURE APPLICATIONS
Wang Tai-hong (李宏伟), Li Hong-wei (周均铭), Zhou Jun-ming. Chin. Phys. B, 2001, 10(13): 1-3.
[5] LINEAR TUNNELING CONDUCTANCE AND INELASTIC-TUNNELING MODEL
LIU MEI (刘楣), XING DING-YU (邢定钰), DONG JIN-MING (董锦明). Chin. Phys. B, 1993, 2(3): 220-229.
No Suggested Reading articles found!