Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes
Zhang Xiao-Xin (张晓昕)a, Zeng Yi-Ping (曾一平)b, Wang Xiao-Guang (王晓光)b, Wang Bao-Qiang (王保强)a, Zhu Zhan-Ping (朱占平)a
a Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b National Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.
Received: 15 December 2003
Revised: 16 January 2004
Accepted manuscript online:
Zhang Xiao-Xin (张晓昕), Zeng Yi-Ping (曾一平), Wang Xiao-Guang (王晓光), Wang Bao-Qiang (王保强), Zhu Zhan-Ping (朱占平) Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes 2004 Chinese Physics 13 1560
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