Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor
Liu Bo (刘波)a, Song Zhi-Tang (宋志棠)a, Zhang Ting (张挺)a, Feng Song-Lin (封松林)a, Gan Fu-Xi (干福熹)b
a Research Centre of Functional Semiconductor Film Engineering & Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; b Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Abstract In this paper, Ag$_{11}$In$_{12}$Te$_{26}$Sb$_{51}$ phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag$_{11}$In$_{12}$Te$_{26}$Sb$_{51}$ thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, $E_{\rm a}$, is 2.07eV. The crystalline Ag$_{11}$In$_{12}$Te$_{26}$Sb$_{51}$ films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag$_{11}$In$_{12}$Te$_{26}$Sb$_{51}$ films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag$_{11}$In$_{12}$Te$_{26}$Sb$_{51}$ films. The sheet resistance of the amorphous ($R_{\rm amo}$) film is found to be larger than $1\times10^6\Omega$ and that of the crystalline ($R_{\rm cry}$) film lies in the range from about $10^3$ to $10^4\Omega$. So we have the ratio $R_{\rm amo}/R_{\rm cry}=10^2\sim 10^3$, which is sufficiently large for application in memory devices.
Received: 22 October 2003
Revised: 04 March 2004
Accepted manuscript online:
PACS:
81.40.Rs
(Electrical and magnetic properties related to treatment conditions)
Fund: Project supported by the National High Technology Development Programme of China (Grant No 2003AA32720), Shanghai Nanotechnology Promotion Centre (0352nm016, 0359nm004, 0252nm084), China Postdoctoral Foundation (Grant No 2003034308), K. C. Wong Education
Cite this article:
Liu Bo (刘波), Song Zhi-Tang (宋志棠), Zhang Ting (张挺), Feng Song-Lin (封松林), Gan Fu-Xi (干福熹) Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor 2004 Chinese Physics 13 1167
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