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Chinese Physics, 2004, Vol. 13(6): 954-957    DOI: 10.1088/1009-1963/13/6/029
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Observation of the current-voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields

Zhang Xiao-Xin (张晓昕)a, Zeng Yi-Ping (曾一平)a, Qiu Zhi-Jun (仇志军)b, Wang Bao-Qiang (王宝强)a, Zhu Zhan-Ping (朱占平)a
a Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract  We have grown resonant tunnelling diodes (RTDs) with different sized emitter prewells and without a prewell. The current-voltage (I-V) characteristics of them in different magnetic fields were investigated. Two important phenomena were observed. First, a high magnetic field can destroy the plateau-like structure in the I-V curves of the RTD. This phenomenon is ascribed to the fact that the high magnetic field will demolish the coupling between the energy level in the main quantum well and that in the emitter quantum well or in the prewell. Secondly, the existence and size of the prewell are also important factors influencing the plateau-like structure.
Keywords:  resonant tunnelling diode      plateau-like structure      magnetic field  
Received:  20 October 2003      Revised:  03 February 2004      Accepted manuscript online: 
PACS:  85.30.Kk (Junction diodes)  
  72.80.Ey (III-V and II-VI semiconductors)  
  73.63.Hs (Quantum wells)  

Cite this article: 

Zhang Xiao-Xin (张晓昕), Zeng Yi-Ping (曾一平), Qiu Zhi-Jun (仇志军), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平) Observation of the current-voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields 2004 Chinese Physics 13 954

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