A novel technique for predicting ionizing radiation effects of commercial MOS devices
Zhang Guo-Qiang (张国强)a, Guo Qi (郭旗)b, Erkin (艾尔肯)b, Lu Wu (陆妩)b, Ren Di-Yuan (任迪远)b
a Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; b Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
Abstract A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.
Received: 04 September 2003
Revised: 13 February 2004
Accepted manuscript online:
Zhang Guo-Qiang (张国强), Guo Qi (郭旗), Erkin (艾尔肯), Lu Wu (陆妩), Ren Di-Yuan (任迪远) A novel technique for predicting ionizing radiation effects of commercial MOS devices 2004 Chinese Physics 13 948
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