Deposition behaviour of single Si adatom on p(2×2) Si(100) surface

doi:10.1088/1009-1963/13/5/026

Abstract

Abstract The deposition of a single Si adatom on the p(2×2) reconstructed Si(100) surface has been simulated by an empirical tight-binding method. Using the perfect and defective Si surfaces as the deposition substrates, the deposition energies are mapped out around the research areas. From the calculated energy plots, the binding sites and several possible diffusion paths are achieved. The introduced defects will make the deposition behaviour different from that on the perfect surface.

Keywords: dimer vacancy deposition diffusion empirical tight-binding

Received: 21 July 2003
Revised: 26 December 2003
Accepted manuscript online:

PACS:	68.43.Mn	(Adsorption kinetics ?)
	68.43.Jk	(Diffusion of adsorbates, kinetics of coarsening and aggregation)

Fund: Project supported by the Natural Science Foundation of Education Committee of Jiangsu Province, China (Grant No 00SJB140002).

Cite this article:

Huang Yan (黄燕), Zhu Xiao-Yan (朱晓焱) Deposition behaviour of single Si adatom on p(2×2) Si(100) surface 2004 Chinese Physics 13 725

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Deposition behaviour of single Si adatom on p(2×2) Si(100) surface

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