Abstract Terbium-doped Zn$_2$SiO$_4$ films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO$_2$. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn$_2$SiO$_4$ in wellimite structure. Photoluminescence measurements of the Tb-doped Zn$_2$SiO$_4$ films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.
Received: 30 June 2003
Revised: 12 November 2003
Accepted manuscript online:
Fund: Project supported by the Special Funds for Major State Basic Research Project of China (Grant No G2000 0683-06), and the Major Programme of the National Natural Science Foundation of China (Grand No 90201038).
Cite this article:
Ji Zhen-Guo (季振国), Zhao Shi-Chao (赵士超), Xiang Yin (向因), Song Yong-Liang (宋永梁), Ye Zhi-Zhen (叶志镇) Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction 2004 Chinese Physics 13 561
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