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Chinese Physics, 2004, Vol. 13(2): 205-211    DOI: 10.1088/1009-1963/13/2/015
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Yield strengths and stress induced crackles in copper films: effects of substrate and passivated layer

Zhang Jian-Min (张建民)a, Xu Ke-Wei (徐可为)b
a College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China; b State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
Abstract  Yield strengths in unpassivated and 530 nm TiN passivated Cu films deposited on Ti, high-speed steel and Ni substrates have been measured by x-ray diffraction (XRD) in combination with the four-point bending method. The results show that, although the texture and average grain size, investigated by XRD and transmission electron microscopy respectively, do not vary with different substrate, the yield strength of the Cu film increases obviously when a thin passivated layer is present and varies slightly with substrates. Many crackles appear in the passivated Cu film on Ti substrate but do not appear in other samples. The experimental results have been explained satisfactorily with an expression for the yield strength of thin films given previously.
Keywords:  copper film      microstructure      yield strength      crackles  
Received:  06 June 2003      Revised:  11 August 2003      Accepted manuscript online: 
PACS:  62.20.F- (Deformation and plasticity)  
  81.40.Lm (Deformation, plasticity, and creep)  
  62.20.Mk  
  81.40.Np (Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure)  
  81.65.Rv (Passivation)  
  68.55.Jk  
  68.37.Lp (Transmission electron microscopy (TEM))  
  73.61.At (Metal and metallic alloys)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 50271038 and 59931010).

Cite this article: 

Zhang Jian-Min (张建民), Xu Ke-Wei (徐可为) Yield strengths and stress induced crackles in copper films: effects of substrate and passivated layer 2004 Chinese Physics 13 205

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