POROUS AMORPHOUS FLUOROPOLYMER FILMS WITH ULTRALOW DIELECTRIC CONSTANT
Ding Shi-jin (丁士进)a, Wang Peng-fei (王鹏飞)a, Zhang Wei (张卫)a, Wang Ji-tao (王季陶)a, Wei William Lee (李伟)b, Zhang Ye-wen (张冶文)c, Xia Zhong-fu (夏钟福)c
a Department of Electronic Engineering, Fudan University, Shanghai 200433, China; b Taiwan Semiconductor Manufacturing Co. (TSMC), Hsinchu, Taiwan, China; c Department of Physics, Tongji University, Shanghai 200437, China
Abstract With the development of ultralarge scale integrated circuit, new interlayer dielectrics with low dielectric constant for multilevel interconnections are required, instead of conventional SiO2 films. For the sake of seeking perfect dielectrics, amorphous fluoropolymer (AF) thin film with a thickness of about 0.9μm has been prepared by spin-coating method, following the principle of phase separation. By capacitance-voltage (C-V) measurements the dielectric constant of the thin film is equal to 1.57 at 1 MHz, which is attributed to numerous pores contained in the film matrix. X-ray photoelectron spectroscopy (XPS) spectra show that after annealing, about 71% CF3 groups in the AF film have decomposed into CF2, CF, etc. This leads to the increase of CF2 groups by three times and CF groups by 8% in the AF film. In a word, compared with the film without being annealed, about 25% carbon, 7% fluorine and 12% oxygen atoms will be lost after annealing at 400℃ for 30min.
Received: 23 March 2000
Revised: 06 July 2000
Accepted manuscript online:
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: Project supported by the National Natural Science Foundation of China (No. 69776026), and by the Foundation for University Key Teacher by the Ministry of Education, China.
Cite this article:
Ding Shi-jin (丁士进), Wang Peng-fei (王鹏飞), Zhang Wei (张卫), Wang Ji-tao (王季陶), Wei William Lee (李伟), Zhang Ye-wen (张冶文), Xia Zhong-fu (夏钟福) POROUS AMORPHOUS FLUOROPOLYMER FILMS WITH ULTRALOW DIELECTRIC CONSTANT 2000 Chinese Physics 9 778
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