Abstract By using the combination of the first-nearest neighbor tight-binding model sp3s* and Green function method in the frame of the scattering theory, we studied the electronic structure of ZnTe/CdSe(100) heterojunction with cation layers interchange across ZnSe-like or CdTe-like interface, and presented the interface band structures and wavevector-resolved interface layer densities of states. By comparing with the electronic states of ideal interfaces, we analyzed the nature and origins of all interface states, and discussed the influence of atom layers interchange on interface electronic structure.
Received: 06 March 1999
Accepted manuscript online:
PACS:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
(Surface states, band structure, electron density of states)
Fund: Project supported by the Natural Science Foundatoin of Henan Province, China (Grant No. 984040500).
Cite this article:
Yang Shi-e (杨仕娥), Jia Yu (贾瑜), Ma Bing-xian (马丙现), Shen San-guo (申三国), Fan Xi-qing (范希庆) ELECTRONIC STRUCTURE OF THE ZnTe/CdSe(100) INTERFACES WITH ATOM INTERCHANGE 1999 Acta Physica Sinica (Overseas Edition) 8 694
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