Abstract In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multi-particle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.
Received: 23 January 1999
Revised: 11 February 1999
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 69896260 and 69687003).
Cite this article:
Liu Shi-an (刘世安), Lin Shi-ming (林世鸣), Wang Qi-ming (王启明) RADIATION OF DRESSED EXCITONS IN THE SEMICONDUCTOR MICROCAVITY 1999 Acta Physica Sinica (Overseas Edition) 8 514
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