Please wait a minute...
Acta Physica Sinica (Overseas Edition), 1999, Vol. 8(3): 223-228    DOI: 10.1088/1004-423X/8/3/010
CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev  

EMISSION AND MASS SPECTRAL ANALYSES OF LASER ABLATED AlN PLUMES

Chen Jin-hai (陈金海), Wang Pei-nan (王培南), Guo Zhao (郭钊), Li Fu-ming (李富铭)
State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Department of Physics, Fudan University, Shanghai 200433, China
Abstract  The emission spectrum of the 3Πi-3Πi (0-0) AlN band and some N+ and N emission lines have been studied in the visible region for the laser ablated plumes. The Stark-shift and Stark broadening were observed. The component species in the ablated plumes were analyzed by time of flight mass spectroscopy. The electron density and the temperature were calculated from the Stark-shift and Stark broadening of N(2D) emission line. The densities of AlN+, Al+, N+, AlN, N and Al were estimated by the mass spectra and the Saha equation.
Received:  22 June 1998      Revised:  08 October 1998      Accepted manuscript online: 
PACS:  78.55.Cr (III-V semiconductors)  
  78.20.Jq (Electro-optical effects)  
  71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 19774018) and the Shanghai Research Center of Applied Physics (Grant No. 98JC14011), China.

Cite this article: 

Chen Jin-hai (陈金海), Wang Pei-nan (王培南), Guo Zhao (郭钊), Li Fu-ming (李富铭) EMISSION AND MASS SPECTRAL ANALYSES OF LASER ABLATED AlN PLUMES 1999 Acta Physica Sinica (Overseas Edition) 8 223

[1] Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell
Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Chin. Phys. B, 2023, 32(1): 017801.
[2] GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers
Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2021, 30(9): 094204.
[3] Enhanced absorption process in the thin active region of GaAs based p-i-n structure
Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Chin. Phys. B, 2021, 30(9): 097803.
[4] Mid-infrared supercontinuum generation and its application on all-optical quantization with different input pulses
Yan Li(李妍), Xinzhu Sang(桑新柱). Chin. Phys. B, 2019, 28(5): 054206.
[5] Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal
Ding Yu(余丁), Guiying Shen(沈桂英), Hui Xie(谢辉), Jingming Liu(刘京明), Jing Sun(孙静), Youwen Zhao(赵有文). Chin. Phys. B, 2019, 28(5): 057102.
[6] High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
Jin-Ming Shang(尚金铭), Jian Feng(冯健), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Yi Zhang(张一), Cun-Zhu Tong(佟存柱), Yu Zhang(张宇), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2019, 28(3): 034202.
[7] High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars
Sheng-Wen Xie(谢圣文), Yu Zhang(张宇), Cheng-Ao Yang(杨成奥), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Yi Zhang(张一), Jin-Ming Shang(尚金铭), Fu-Hui Shao(邵福会), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2019, 28(1): 014208.
[8] Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas
Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏). Chin. Phys. B, 2018, 27(12): 127805.
[9] Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm
Yi Zhang(张一), Fu-Hui Shao(邵福会), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Jin-Ming Shang(尚金铭), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2018, 27(12): 124207.
[10] Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures
Shuang-Tao Liu(刘双韬), Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Yuan Peng(彭莉媛), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫). Chin. Phys. B, 2018, 27(12): 127803.
[11] Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
Bin Zhao(赵斌), Wei Hu(胡巍), Xian-Sheng Tang(唐先胜), Wen-Xue Huo(霍雯雪), Li-Li Han(韩丽丽), Ming-Long Zhao(赵明龙), Zi-Guang Ma(马紫光), Wen-Xin Wang(王文新), Hai-Qiang Jia(贾海强), Hong Chen(陈弘). Chin. Phys. B, 2018, 27(4): 047803.
[12] Magneto-optical properties of self-assembled InAs quantum dots for quantum information processing
Jing Tang(唐静), Xiu-Lai Xu(许秀来). Chin. Phys. B, 2018, 27(2): 027804.
[13] The residual C concentration control for low temperature growth p-type GaN
Shuang-Tao Liu(刘双韬), De-Gang Zhao(赵德刚), Jing Yang(杨静), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Xiang Li(李翔), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Qun Zhang(张立群). Chin. Phys. B, 2017, 26(10): 107102.
[14] N-type GaSb single crystals with high below-band gap transmission
Yong-Biao Bai(白永彪), You-Wen Zhao(赵有文), Gui-Ying Shen(沈桂英), Xiao-Yu Chen(陈晓玉), Jing-Ming Liu(刘京明), Hui Xie(谢晖), Zhi-Yuan Dong(董志远), Jun Yang(杨俊), Feng-Yun Yang(杨凤云), Feng-Hua Wang(王凤华). Chin. Phys. B, 2017, 26(10): 107801.
[15] Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm
Yong-Zhou Xue(薛永洲), Ze-Sheng Chen(陈泽升), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川), De-Sheng Jiang(江德生), Xiu-Ming Dou(窦秀明), Bao-Quan Sun(孙宝权). Chin. Phys. B, 2017, 26(8): 084202.
No Suggested Reading articles found!