Abstract The highly excited vibrational energy levels of SiH stretches of silane SiH4 in the electronic ground state are calculated using a three-parameter nonlinear model, i.e., the quantized discrete self-trapping equation. The obtained results are in good agreements with the experimental data and with those obtained from local mode calculations of others. We note that SiH4 molecule is a typical molecule close to the local mode limit, and that when n≥3, the molecule could be thought of as vibrating with the four SiH stretching quanta trapped into a single SiH bond.
Received: 02 September 1998
Revised: 26 October 1998
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No.29673028) and by the Youth Science Research Foundation of Sichuan University (Grant No. 1998-37), China.
Cite this article:
Chen Xiang-rong (陈向荣), Cheng Yan (程艳), Luo Jun (罗俊), Gou Qing-quan (芶清泉), Pang Xiao-feng (庞小峰) A NONLINEAR MODEL FOR HIGHLY EXCITED VIBRATIONAL ENERGY LEVELS OF SILANE 1999 Acta Physica Sinica (Overseas Edition) 8 131
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