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Acta Physica Sinica (Overseas Edition), 1999, Vol. 8(1): 46-51    DOI: 10.1088/1004-423X/8/1/008
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

CALCULATION OF ELECTRONIC STATES OF Si(337) SURFACE

Jia Yu (贾瑜), Ma Bing-xian (马丙现), Shen San-guo (申三国), Yang Shi-e (杨仕娥)
Laboratory of Materials Physics, Zhengzhou University, Zhengzhou, 450052, China
Abstract  Using the scattering-theoretic method and employing the nearest-neighbor tight-binding formalism to describe the bulk electronic structure, we have studied the electronic structure of Si(337) surface. The wave-vector-resolved layer densities of states are presented. The results show that there are six surface bound states in the range from -12.0 to 2.0 eV. Some properties of these surface states are discussed.
Received:  27 April 1998      Revised:  10 September 1998      Accepted manuscript online: 
PACS:  71.20.Mq (Elemental semiconductors)  
  71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))  
  73.20.At (Surface states, band structure, electron density of states)  
  68.47.Fg (Semiconductor surfaces)  
Fund: Project supported by the Natural Science Foundation of Henan Province (Grant No.984040500), China.

Cite this article: 

Jia Yu (贾瑜), Ma Bing-xian (马丙现), Shen San-guo (申三国), Yang Shi-e (杨仕娥) CALCULATION OF ELECTRONIC STATES OF Si(337) SURFACE 1999 Acta Physica Sinica (Overseas Edition) 8 46

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