TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD
Zhang Xiang-dong (张向东)a, Wang Jun-zhong (王俊忠)a, Li Bo-zang (李伯臧)a, Pu Fu-cho (蒲富恪)ab
a Institute of Physics and Center for Condensed Matter Physics, Academia Sinica, Beijing 100080, China; b Department of Physics, Guangzhou Normal College, Guangzhou 510400, China
Abstract Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator (semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer.
Received: 16 March 1998
Revised: 09 April 1998
Accepted manuscript online:
PACS:
75.70.Cn
(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
(Magnetization curves, hysteresis, Barkhausen and related effects)
Fund: Project supported by the National Natural Science Foundation of China under the Grant No. 19774076.
Cite this article:
Zhang Xiang-dong (张向东), Wang Jun-zhong (王俊忠), Li Bo-zang (李伯臧), Pu Fu-cho (蒲富恪) TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD 1998 Acta Physica Sinica (Overseas Edition) 7 703
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