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Acta Physica Sinica (Overseas Edition), 1998, Vol. 7(11): 841-850    DOI: 10.1088/1004-423X/7/11/006
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

LATTICE DYNAMICS OF WURTZITE SEMICONDUCTORS GaN AND AlN

Wei Guang-hong (韦广红), Zi Jian (资剑), Zhang Kai-ming (张开明), Xie Xi-de (谢希德)
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Abstract  The lattice dynamics of wurtzite GaN and AlN is studied within the framework of a rigid-ion model. Short-range interactions up to the third nearest neighbors are described by using a valence-force-field potential and the long-range Coulomb interactions between ions are calculated via an Ewald summation. Phonon dispersion curves, density of states and specific heats are presented.
Received:  17 December 1997      Revised:  19 June 1998      Accepted manuscript online: 
PACS:  63.20.D- (Phonon states and bands, normal modes, and phonon dispersion)  
  71.20.Nr (Semiconductor compounds)  
  78.40.Fy (Semiconductors)  
  65.60.+a (Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)  
  73.20.At (Surface states, band structure, electron density of states)  
Fund: Project supported by the National Natural Science Foundation of China and by the State Commission of Science and Technology of China.

Cite this article: 

Wei Guang-hong (韦广红), Zi Jian (资剑), Zhang Kai-ming (张开明), Xie Xi-de (谢希德) LATTICE DYNAMICS OF WURTZITE SEMICONDUCTORS GaN AND AlN 1998 Acta Physica Sinica (Overseas Edition) 7 841

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