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Acta Physica Sinica (Overseas Edition), 1996, Vol. 5(6): 456-462    DOI: 10.1088/1004-423X/5/6/007
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL

DONG WEN-FU (董文甫)a, YANG QIN-QING (杨沁清)a, LI JIAN (黎建)a, WANG QI-MING (王启明)a, CHUI QIAN (崔堑)b, ZHOU JUN-MING (周钧铭)b, HUANG QI (黄绮)b
a National Integrated Opto-electronics Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083, China; b Institute of Physics, Academia Sinica, Beijing 100080, China
Abstract  Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.
Received:  18 March 1995      Revised:  03 January 1996      Accepted manuscript online: 
PACS:  78.60.Fi (Electroluminescence)  
  78.55.Hx (Other solid inorganic materials)  
  73.61.Le (Other inorganic semiconductors)  
  78.67.De (Quantum wells)  
  73.63.Hs (Quantum wells)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  

Cite this article: 

DONG WEN-FU (董文甫), YANG QIN-QING (杨沁清), LI JIAN (黎建), WANG QI-MING (王启明), CHUI QIAN (崔堑), ZHOU JUN-MING (周钧铭), HUANG QI (黄绮) ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL 1996 Acta Physica Sinica (Overseas Edition) 5 456

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