GROWTH OF PREFERENTIALLY ORIENTED CUBIC BORON NITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION

doi:10.1088/1004-423X/5/2/007

Abstract

Abstract Preferentially oriented cubic boron nitride films on nickel substrates have been grown using hot-filament-assisted rf plasma chemical vapor deposition method. X-ray photoelectron spectroscopy shows that the cubic boron nitride films are stoichiometric. Scanning electron microscopy and X-ray diffraction show that the films are of high quality with well-faceted and (220) preferentially oriented grains, without X-ray diffraction detectable hexagonal boron nitride phase. The nucleation and growth process has been investigated. After 40min deposition, well aligned, well faceted cubic boron nitride nuclei can be seen on the substrnies, and after 2 h deposition, the rectangular grains can be seen on the substrate with their corresponding edges parallel to each other in scanning electron microscopic images. The ratio of the diffraction peak height of (220) face to that of (111) face is about 5.2 in the X-ray diffraction pattern, but the corresponding value of the random cubic boron nitride crystallites is only 0.06.

Received: 23 November 1994
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	79.60.Bm	(Clean metal, semiconductor, and insulator surfaces)
	68.55.-a	(Thin film structure and morphology)
	61.05.cp	(X-ray diffraction)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))

Fund: Project supported by the National Natural Science Foundation of China.

Cite this article:

GUO YONG-PING (郭永平), SONG ZHI-ZHONG (宋志忠), LI GONG-CHUAN (李公川), CHEN GUANG-HUA (陈光华) GROWTH OF PREFERENTIALLY ORIENTED CUBIC BORON NITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION 1996 Acta Physica Sinica (Overseas Edition) 5 143

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GROWTH OF PREFERENTIALLY ORIENTED CUBIC BORON NITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION

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