DETERMINATION OF CAPTURE BARRIERS OF DEFECTS FOR GaAs ALLOYS AND TRANSIENT PHOTO-RESISTIVITY SPECTROSCOPY
WANG HAI-LONG (王海龙)a, FENG SONG-LIN (封松林), ZHOU JIE (周洁), YANG XI-ZHEN (杨锡震)a
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijirg 100083, China; a Department of Physics, Beijing Normal University, Beijing 100875, China
Abstract Si-doped Ga0.7Al0.3As grown by molecular beam epitaxy (MBE) and undoped Ga0.47Al0.53As grown by chemical beam epitaxy (CBE) have been investigated using a new deep level characterization method-transient photo-resistivity spectroscopy, which we recently developed. This method measures directly the capture process of deep centers. In GaAlAs, apparent capture barrier energy EB= 0.25eV of DX center was determined and intrinasic capture barrier energy E$\sigma$ = 0.16eV was directly measured. In GaInAs, a defect with capture barier energy EB= 0.2BeV was observed. The result proved that DX centers capture electron only from band L, belonging to small lattice relaxation model. The theoretical deduction of transient photo-resistivity spectroscopy was improved.
Received: 27 January 1995
Accepted manuscript online:
(Molecular, atomic, ion, and chemical beam epitaxy)
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
WANG HAI-LONG (王海龙), FENG SONG-LIN (封松林), ZHOU JIE (周洁), YANG XI-ZHEN (杨锡震) DETERMINATION OF CAPTURE BARRIERS OF DEFECTS FOR GaAs ALLOYS AND TRANSIENT PHOTO-RESISTIVITY SPECTROSCOPY 1996 Acta Physica Sinica (Overseas Edition) 5 1
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