Abstract Crystal Si were implanted with different doses of C+ from 1011 to 1017 cm-2 at an energy of 50 keV. $\beta$-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C+ dose ≥1015 cm-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C+ dose increases; the samples with C+ dose ≤1014 cm-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of $\beta$-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous $\beta$-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission.
Received: 24 January 1995
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China, and in part by the Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica.
Cite this article:
LIAO LIANG-SHENG (廖良生), BAO XI-MAO (鲍希茂), LI NING-SHENG (李宁生), YANG ZHI-FENG (杨志峰), MIN NAI-BEN (闵乃本) INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS $\beta$-SIC 1995 Acta Physica Sinica (Overseas Edition) 4 783
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