FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs

doi:10.1088/1004-423X/3/6/008

Abstract

Abstract We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization.

Received: 13 July 1993
Accepted manuscript online:

PACS:	72.40.+w	(Photoconduction and photovoltaic effects)
	68.55.A-	(Nucleation and growth)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	73.61.Ey	(III-V semiconductors)
	61.72.S-	(Impurities in crystals)

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CHEN ZHONG-HUI (陈忠辉), LIU PU-LIN (刘普霖), ZHOU TAO (周涛), SHI GUO-LIANG (史国良), LU WEI (陆卫), HUANG XING-LIANG (黄醒良), SHEN XUE-CHU (沈学础) FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs 1994 Acta Physica Sinica (Overseas Edition) 3 453

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FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs

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