WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GaAs/AlGaAs QUANTUM WELLS
JIN SHI-RONG (金世荣)ab, XU ZHONG-YING (徐仲英)a, LUO JIN-SHENG (罗晋生)b, LUO CHANG-PING (罗昌平)b, XU JI-ZONG (许继宗)b, ZHENG BAO-ZHEN (郑宝真)b
a State Key Laboratory of superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China; b Department of Electronic Engineering, Xi'an Jiaotong University, Xi'an 710049, China
Abstract The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly linear decrease of the lifetime with decreasing well width. However, when the well is further decreased, a saturation and even increase of the lifetime with decreeing well width are observed. The experimental data are compared with the theory of radiative excitonic recombination, and show that well width dependence of the measured photoluminescence lifetime can be attributed mainly to the change of the excitonic effective volume and the overlap integral as well.
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