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Acta Physica Sinica (Overseas Edition), 1994, Vol. 3(4): 250-254    DOI: 10.1088/1004-423X/3/4/002
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NANO-CRYSTALLINE SILICON FILMS PRODUCED BY LAYER-BY-LAYER DEPOSITION TECHNIQUE AND THEIR NOVEL PROPERTIES

CHEN MAO-RUI (陈茂瑞), CHEN KUN-JI (陈坤基)
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
Abstract  We have applied the layer-by-layer deposition technique to the growth of nano-crystalline silicon films by varying the hydrogen plasma exposure time. The tailoring effect of hydrogen plasma has been studied, The novel optical and electronic proper-ties of these films have also been reported.
Received:  04 May 1993      Accepted manuscript online: 
PACS:  81.16.-c (Methods of micro- and nanofabrication and processing)  
  68.55.A- (Nucleation and growth)  
  52.77.Dq (Plasma-based ion implantation and deposition)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  78.66.Db (Elemental semiconductors and insulators)  
  71.20.Mq (Elemental semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China.

Cite this article: 

CHEN MAO-RUI (陈茂瑞), CHEN KUN-JI (陈坤基) NANO-CRYSTALLINE SILICON FILMS PRODUCED BY LAYER-BY-LAYER DEPOSITION TECHNIQUE AND THEIR NOVEL PROPERTIES 1994 Acta Physica Sinica (Overseas Edition) 3 250

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