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Acta Physica Sinica (Overseas Edition), 1994, Vol. 3(12): 925-931    DOI: 10.1088/1004-423X/3/12/007
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

JIANG SHAN (姜山), SHEN XUE-CHU (沈学础)
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
Abstract  The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd1-xMnxTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd1-xMnxTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.
Received:  09 November 1993      Revised:  21 March 1994      Accepted manuscript online: 
PACS:  78.67.De (Quantum wells)  
  71.20.Nr (Semiconductor compounds)  
  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
  75.50.Pp (Magnetic semiconductors)  
  78.20.Ls (Magneto-optical effects)  

Cite this article: 

JIANG SHAN (姜山), SHEN XUE-CHU (沈学础) STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS 1994 Acta Physica Sinica (Overseas Edition) 3 925

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