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Acta Physica Sinica (Overseas Edition), 1994, Vol. 3(10): 730-735    DOI: 10.1088/1004-423X/3/10/002
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NMR STUDIES OF HYDROGEN MICROSTURUCTURES IN HYDROGENATED AMORPHOUS SILICON FILMS

QU XUE-XUAN (瞿学选), CHEN KUN-JI (陈坤基), CHEN MAO-RUI (陈茂瑞), HU CHENG (胡澄), LI ZHI-FENG (李志锋), FENG DUAN (冯端)
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210008, China
Abstract  Four kinds of a-Si: H films deposited in the PECVD system with different Ts are studied by 1H NMR technique. Direct evidence is given to confirm hydrogen atoms in the diluted and clustered phases. The local bonding configurations for hydrogen and the density of dangling bonds are analyzed by ESR and infrared absorption spectroscopy. The behaviour of hydrogen in a-Si; H films is discussed.
Received:  02 September 1993      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  52.77.Dq (Plasma-based ion implantation and deposition)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  76.60.-k (Nuclear magnetic resonance and relaxation)  
  78.30.Am (Elemental semiconductors and insulators)  
  61.43.Dq (Amorphous semiconductors, metals, and alloys)  
Fund: Project supported by the National Natural Science Foundation of China.

Cite this article: 

QU XUE-XUAN (瞿学选), CHEN KUN-JI (陈坤基), CHEN MAO-RUI (陈茂瑞), HU CHENG (胡澄), LI ZHI-FENG (李志锋), FENG DUAN (冯端) NMR STUDIES OF HYDROGEN MICROSTURUCTURES IN HYDROGENATED AMORPHOUS SILICON FILMS 1994 Acta Physica Sinica (Overseas Edition) 3 730

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