ANISOTROPIC INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON

doi:10.1088/1004-423X/2/9/003

Abstract

Abstract It is demonstrated in this paper that the infrared-up-conversion luminescence generation from porous silicon, considered as an enhanced third-order nonlinear optical effect by the recent work, is anisotropic as the polarization vector of normally incident fundamental light is rotated. A new method has been used to determine the anisotropy parameter $\sigma$ of the third-order nonlinear optical tensor $\chi$⁽³⁾. Due to the sensitivity of $\sigma$ to the crystal structure and microscopic electronic properties, the difference in $\sigma$′s between porous and crystalline silicon, particularly in their phases, demonstrates that the nanometer structure of porous silicon induces a dra-matic change of the electronic band structure, but the strongly anisotropic crystal property remains unchanged.

Received: 08 September 1992
Accepted manuscript online:

PACS:	78.55.Mb	(Porous materials)
	61.43.Gt	(Powders, porous materials)
	71.23.Cq	(Amorphous semiconductors, metallic glasses, glasses)
	72.80.Ng	(Disordered solids)

Fund: Project supported by the National Natural Science Foundation of China.

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WANG JIAN (王健), JIANG HONG-BING (蒋红兵), WANG WEN-CHENG (王文澄), ZHENG JIA-BIAO (郑家骠), ZHANG FU-LONG (张甫龙), HAO PING-HAI (郝平海), HOU XIAO-YUAN (侯晓远), WANG XUN (王迅) ANISOTROPIC INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON 1993 Acta Physica Sinica (Overseas Edition) 2 658

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ANISOTROPIC INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON

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