PHOTOLUMINESCENCE PROPERTIES OF NANO-SIZE CRYSTALLINE SILICON FILMS
TANG WEN-GUO (唐文国)a, GONG TAO (龚涛)a, LI ZI-YUAN (李自元)a, LIU XIANG-NA (刘湘娜)b, HE YU-LIANGb
a Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China; bDepartment of Physics and State Key Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210008, China
Abstract Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component.
Received: 12 November 1992
Accepted manuscript online:
TANG WEN-GUO (唐文国), GONG TAO (龚涛), LI ZI-YUAN (李自元), LIU XIANG-NA (刘湘娜), HE YU-LIANG (何宇亮) PHOTOLUMINESCENCE PROPERTIES OF NANO-SIZE CRYSTALLINE SILICON FILMS 1993 Acta Physica Sinica (Overseas Edition) 2 776
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