High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

doi:10.1088/1674-1056/ac6dbf

Abstract Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks (CTSs) are investigated comparatively under a maximum fabrication temperature of 280 ℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer (CTL), the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/n-SnO₂/blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂, and the formation of a built-in electric field in the heterojunction.

Keywords: nonvolatile memory a-IGZO thin-film transistor (TFT) charge trapping stack p-SnO/n-SnO₂ heterojunction

Received: 11 January 2022
Revised: 31 March 2022
Accepted manuscript online: 07 May 2022

PACS:	85.40.-e	(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
	85.35.-p	(Nanoelectronic devices)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61874029).

Corresponding Authors: Wen-Jun Liu, Shi-Jin Ding
E-mail: wjliu@fudan.edu.cn;sjding@fudan.edu.cn

Cite this article:

Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进) High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack 2023 Chin. Phys. B 32 018503

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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack