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Chin. Phys. B, 2022, Vol. 31(5): 058801    DOI: 10.1088/1674-1056/ac4749
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model

Xin-Miao Zhu(朱鑫淼)1, Min Cui(崔敏)1,†, Yu Wang(汪宇)2, Tian-Jing Yu(于添景)1, Jin-Xiang Deng(邓金祥)1, and Hong-Li Gao(高红丽)1
1 Faculty of Science, Beijing University of Technology, Beijing 100124, China;
2 Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China
Abstract  Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.
Keywords:  GeSn      thermophotovoltaic device      active layer      photovoltaic cell  
Received:  23 July 2021      Revised:  15 November 2021      Accepted manuscript online: 
PACS:  88.40.fc (Modeling and analysis)  
  84.60.Rb (Thermoelectric, electrogasdynamic and other direct energy conversion)  
  02.60.-x (Numerical approximation and analysis)  
  78.40.Fy (Semiconductors)  
Fund: Project supported by the Beijing Natural Science Foundation Program,China (Grant No.4192016).
Corresponding Authors:  Min Cui,E-mail:mcui@bjut.edu.cn     E-mail:  mcui@bjut.edu.cn
About author:  2021-12-31

Cite this article: 

Xin-Miao Zhu(朱鑫淼), Min Cui(崔敏), Yu Wang(汪宇), Tian-Jing Yu(于添景),Jin-Xiang Deng(邓金祥), and Hong-Li Gao(高红丽) GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model 2022 Chin. Phys. B 31 058801

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