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Chin. Phys. B, 2022, Vol. 31(2): 028505    DOI: 10.1088/1674-1056/ac0e26
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Impact of STI indium implantation on reliability of gate oxide

Xiao-Liang Chen(陈晓亮)1,2,†, Tian Chen(陈天)2, Wei-Feng Sun(孙伟锋)1, Zhong-Jian Qian(钱忠健)2, Yu-Dai Li(李玉岱)2, and Xing-Cheng Jin(金兴成)2
1 National ASIC System Engineering Research Center, School of Electronic Science & Engineering, Southeast University, Nanjing 210096, China;
2 China Resources Microelectronics Co., Ltd, China
Abstract  The impacts of shallow trench isolation (STI) indium implantation on gate oxide and device characteristics are studied in this work. The stress modulation effect is confirmed in this research work. An enhanced gate oxide oxidation rate is observed due to the enhanced tensile stress, and the thickness gap is around 5%. Wafers with and without STI indium implantation are manufactured using the 150-nm silicon on insulator (SOI) process. The ramped voltage stress and time to breakdown capability of the gate oxide are researched. No early failure is observed for both wafers the first time the voltage is ramped up. However, a time dependent dielectric breakdown (TDDB) test shows more obvious evidence that the gate oxide quality is weakened by the STI indium implantation. Meanwhile, the device characteristics are compared, and the difference between two devices is consistent with the equivalent oxide thickness (EOT) gap.
Keywords:  silicon-on-insulator      shallow trench isolation (STI) implantation      gate oxide reliability  
Received:  20 May 2021      Revised:  18 June 2021      Accepted manuscript online:  24 June 2021
PACS:  85.30.Tv (Field effect devices)  
  61.80.Ed (γ-ray effects)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
Corresponding Authors:  Xiao-Liang Chen     E-mail:  chenxiaoliang2@crmicro.com

Cite this article: 

Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成) Impact of STI indium implantation on reliability of gate oxide 2022 Chin. Phys. B 31 028505

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