C band microwave damage characteristics of pseudomorphic high electron mobility transistor

doi:10.1088/1674-1056/abf135

Abstract The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor (pHEMT) under the irradiation of C band high-power microwave (HPM) is investigated in this paper. Based on the theoretical analysis, the thermoelectric coupling model is established, and the key damage parameters of the device under typical pulse conditions are predicted, including the damage location, damage power, etc. By the injection effect test and device microanatomy analysis through using scanning electron microscope (SEM) and energy dispersive spectrometer (EDS), it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage, especially the side below the gate near the source. The damage power in the injection test is about 40 dBm and in good agreement with the simulation result. This work has a certain reference value for microwave damage assessment of pHEMT.

Keywords: high power microwave pseudomorphic high electron mobility transistor damage mechanism C band low noise amplifier (LNA)

Received: 27 November 2020
Revised: 02 March 2021
Accepted manuscript online: 24 March 2021

PACS:	85.30.Tv	(Field effect devices)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the Foundation Enhancement Plan and the National Natural Science Foundation of China (Grant No. 61974116).

Corresponding Authors: Qi-Wei Li
E-mail: liqiwei161@163.com

Cite this article:

Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇) C band microwave damage characteristics of pseudomorphic high electron mobility transistor 2021 Chin. Phys. B 30 098502

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C band microwave damage characteristics of pseudomorphic high electron mobility transistor

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