Effect of Mo doping on phase change performance of Sb2Te3

doi:10.1088/1674-1056/abe22d

Abstract Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb₂Te₃ (Mo_0.26Sb₂Te₃, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb₂Te₃(ST) and will crystallize only when the annealing temperature is higher than 250 ℃. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4×10⁵ cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.

Keywords: phase-change memory Sb₂Te₃ thin films nanocomposites

Received: 15 December 2020
Revised: 28 January 2021
Accepted manuscript online: 02 February 2021

PACS:	68.35.bd	(Metals and alloys)
	68.37.Yz	(X-ray microscopy)
	68.60.Dv	(Thermal stability; thermal effects)

Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0701703 and 2017YFA0206101), the National Natural Science Foundation of China (Grant No. 61874151), and the Science and Technology Council of Shanghai, China (Grant Nos. 19JC1416801 and 19JC1416802).

Corresponding Authors: Liang-Cai Wu
E-mail: lcwu@dhu.edu.cn

Cite this article:

Wan-Liang Liu(刘万良), Ying Chen(陈莹), Tao Li(李涛), Zhi-Tang Song(宋志棠), and Liang-Cai Wu(吴良才) Effect of Mo doping on phase change performance of Sb₂Te₃ 2021 Chin. Phys. B 30 086801

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Effect of Mo doping on phase change performance of Sb₂Te₃