Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

doi:10.1088/1674-1056/abdb21

Abstract Band alignment between NiO_x and nonpolar GaN plane and between NiO_x and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiO_x/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiO_x films. By fitting the Ga 3d spectrum obtained from the NiO_x/GaN interface, we find that relatively high Ga-O content at the interface corresponds to a small band offset. On the one hand, the high Ga-O content on the GaN surface will change the growth mode of NiO_x. On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.

Keywords: GaN NiO_x band alignment vertical diode

Received: 08 December 2020
Revised: 08 January 2021
Accepted manuscript online: 13 January 2021

PACS:	77.84.Bw	(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	52.59.Mv	(High-voltage diodes)

Fund: Project supported by the Fund from the Open Project Key Laboratory of Microelectronic Devices and Integrated Technology, China (Grant No. 202006), the Doctoral Research Support Foundation of Shenyang Ligong University, China (Grant No. 1010147000914), and the Science and Technology Program of Ningbo, China (Grant No. 2019B10129).

Corresponding Authors: Liu-An Li, Xin-Zhi Liu
E-mail: liliuan@mail.sysu.edu.cn;liuxzh39@mail.sysu.edu.cn

Cite this article:

Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平) Band alignment between NiO_x and nonpolar/semipolar GaN planes for selective-area-doped termination structure 2021 Chin. Phys. B 30 067701

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Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

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Band alignment between NiO_x and nonpolar/semipolar GaN planes for selective-area-doped termination structure