| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
| Xi-Ming Chen(陈喜明)1,2, Bang-Bing Shi(石帮兵)2, Xuan Li(李轩)1,†, Huai-Yun Fan(范怀云)2, Chen-Zhan Li(李诚瞻)2, Xiao-Chuan Deng(邓小川)1, Hai-Hui Luo(罗海辉)2, Yu-Dong Wu(吴煜东)2, and Bo Zhang(张波)1 |
| 1 School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; 2 State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Company Ltd., Zhuzhou 412001, China |
|
|
|
|
Abstract In order to investigate the characteristics and mechanisms of subthreshold voltage hysteresis (∆ V th, sub) of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), 4H-SiC planar and trench MOSFETs and corresponding P-type planar and trench metal-oxide-semiconductor (MOS) capacitors are fabricated and characterized. Compared with planar MOSFEF, the trench MOSFET shows hardly larger ∆ V th, sub in wide temperature range from 25 °C to 300 °C. When operating temperature range is from 25 °C to 300 °C, the off-state negative V gs of planar and trench MOSFETs should be safely above -4 V and -2 V, respectively, to alleviate the effect of ∆ V th, sub on the normal operation. With the help of P-type planar and trench MOS capacitors, it is confirmed that the obvious ∆ V th, sub of 4H-SiC MOSFET originates from the high density of the hole interface traps between intrinsic Fermi energy level (E i) and valence band (E v). The maximum ∆ V th, sub of trench MOSFET is about twelve times larger than that of planar MOSFET, owing to higher density of interface states (D it) between E i and E v. These research results will be very helpful for the application of 4H-SiC MOSFET and the improvement of ∆ V th, sub of 4H-SiC MOSFET, especially in 4H-SiC trench MOSFET.
|
Received: 08 October 2020
Revised: 30 October 2020
Accepted manuscript online: 15 December 2020
|
|
PACS:
|
85.30.Tv
|
(Field effect devices)
|
| |
43.66.Ed
|
(Auditory fatigue, temporary threshold shift)
|
| |
71.20.-b
|
(Electron density of states and band structure of crystalline solids)
|
| |
68.35.Dv
|
(Composition, segregation; defects and impurities)
|
|
| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0903203), the National Natural Science Foundation of China (Grant No. 62004033), and China Postdoctoral Science Foundation (Grant No. 2020M683287). |
|
Corresponding Authors:
†Corresponding author. E-mail: andrew_xuanli@foxmail.com
|
Cite this article:
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs 2021 Chin. Phys. B 30 048504
|
1 Chen Z, Yao Y, Boroyevich D, Ngo K D T, Mattavelli P and Rajashekara K 2014 IEEE Trans. Power Electron. 29 2307
2 She X, Huang A Q and Ozpineci B 2017 IEEE T. Ind. Electron. 64 8193
3 Fabre J, Ladoux P and Piton M 2015 IEEE Trans. Power Electron. 30 4079
4 Molin Q, Kanoun M, Raynaud C and Morel H 2018 Microelectron. Reliab. 88-90 656
5 Asllani B, Castellazzi A, Salvado O A, Fayyaz A, Morel H and Planson D 2019 IEEE International Reliability Physics Symposium, March 31-April 4, 2019, California, USA, pp. 1-6
6 Rescher G, Pobegen G, Aichinger T and Grasser T 2016 IEEE International Electron Devices Meeting, December 3-7, 2016, San Francisco, USA, pp. 10.8.1-10.8.4
7 Aichinger T, Rescher G and Pobegen G 2018 Microelectron. Reliab. 80 68
8 Unger C and Pfost M 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference, November 7-9, 2018, Nottingham, United Kingdom, pp. 1-5
9 Basler T, Heer D, Peters D, Aichinger T and Schoerner R International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, June 5-7, 2018, Nuernberg, Germany, pp. 1-7
10 Unger C and Pfost M 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, May 13-17, 2018, Chicago, USA, pp. 48-51
11 Hamilton D P, Jennings M R, Perez-Tomas A, Russell S A O, Hindmarsh S A, Fisher C A and Mawby P A 2017 IEEE Trans. Power Electron. 32 7967
12 Cheng L, Agarwal A K, Dhar S, Ryu S H and Palmour J W 2012 J. Electron. Mater. 41 910
13 Chatty K, Banerjee S, Chow T P and Gutmann R J 2002 IEEE Electron. Dev. Lett. 23 330
14 Puschkarsky K, Grasser T, Aichinger T, Gustin W and Reisinger H 2019 IEEE T. Electron Dev. 66 4604
15 Rasinger F, Hauck M, Rescher G, Aichinger T, Weber H B, Krieger M and Pobegen G 2019 Appl. Phys. Lett. 115 152102
16 Puschkarsky K, Reisinger H, Aichinger T, Gustin W and Grasser T 2018 IEEE T. Dev. Mater. Res. 18 144
17 Yano H, Kanafuji N, Osawa A, Hatayama T and Fuyuki T 2015 IEEE T. Electron Dev. 62 324
18 Cooper J, J. A 1997 Phys. Status Solidi A 162 305 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
