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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
| Hao Zou(邹浩), Lin-An Yang(杨林安)†, Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
| 1 The State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract The effects of various notch structures on direct current (DC) and radio frequency (RF) performances of AlGaN/GaN high electron mobility transistors (HEMTs) are analyzed. The AlGaN/GaN HEMTs, each with a 0.8-μm gate length, 50-μm gate width, and 3-μm source-drain distance in various notch structures at the AlGaN/GaN barrier layer, are manufactured to achieve the desired DC and RF characteristics. The maximum drain current (I ds,max), pinch-off voltage (V th), maximum transconductance (g m), gate voltage swing (GVS), subthreshold current, gate leakage current, pulsed I-V characteristics, breakdown voltage, cut-off frequency (f T), and maximum oscillation frequency (fmax) are investigated. The results show that the double-notch structure HEMT has a 30% improvement of gate voltage swing, a 42.2% improvement of breakdown voltage, and a 9% improvement of cut-off frequency compared with the conventional HEMT. The notch structure also has a good suppression of the current collapse.
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Received: 06 October 2020
Revised: 13 November 2020
Accepted manuscript online: 17 December 2020
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PACS:
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05.10.Ln
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(Monte Carlo methods)
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61.72.uj
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(III-V and II-VI semiconductors)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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52.70.Gw
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(Radio-frequency and microwave measurements)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61674117 and 61974108) and the State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology of Xidian University, China. |
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Corresponding Authors:
†Corresponding author. E-mail: layang@xidian.edu.cn
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Cite this article:
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors 2021 Chin. Phys. B 30 040502
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