Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica

doi:10.1088/1674-1056/abcf32

Abstract The growth of γ -In₂Se₃ thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ -In₂Se₃ is achieved at a relatively low growth temperature. An ultrathin β -In₂Se₃ buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystalline γ -In₂Se₃ at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ -In₂Se₃ thin films.

Keywords: γ -In₂Se₃ molecular beam epitaxy optoelectronic response

Received: 07 May 2020
Revised: 07 October 2020
Accepted manuscript online: 01 December 2020

PACS:	77.55.Px	(Epitaxial and superlattice films)
	78.55.-m	(Photoluminescence, properties and materials)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)

Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2018YFA0306102 and 2018YFA0306703), the National Natural Science Foundation of China (Grant No. 61474014), the Sichuan Science and Technology Program, China (Grant No.2019YJ0202), and the University Program for Elaborate Courses of Postgraduates.

Corresponding Authors: ^†Corresponding author. E-mail: hdli@uestc.edu.cn ^‡Corresponding author. E-mail: xbniu@uestc.edu.cn

Cite this article:

Xibo Yin(尹锡波), Yifan Shen(沈逸凡), Chaofan Xu(徐超凡), Jing He(贺靖), Junye Li(李俊烨), Haining Ji(姬海宁), Jianwei Wang(王建伟), Handong Li(李含冬), Xiaohong Zhu(朱小红), Xiaobin Niu(牛晓滨), and Zhiming Wang(王志明) Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In₂Se₃ thin films on mica 2021 Chin. Phys. B 30 017701

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Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica

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Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In₂Se₃ thin films on mica